Abstract
Fundamental problems of and approaches to modeling nanostructure devices are reviewed. First the requirements for modeling charge transport in classical and nanostructure devices are compared and contrasted. Then the quantum mechanical concepts of transmission probabilities and eigen energies in nanostructures are related back to the classical concepts of resistance and capacitance, respectively. Next a small illustrative sampling of numerical approaches to calculation of the quantum mechanical properties of nanostructures is presented. Finally examples are given of how such theoretical concepts and numerical methods can be applied to modeling existing and future devices.
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© 1993 Springer-Verlag Wien
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Hess, K., Register, L.F. (1993). Modeling Nano-Structure Devices. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_2
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_2
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
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