Efficient and Accurate Simulation of EEPROM Write Time and its Degradation Using MINIMOS

Abstract

This paper demonstrates an efficient approach to flash-EEPROM write time simulation. MINIMOS is used to simulate the operation of the MOSFET equivalent device consisting of the Si substrate and the EEPROM’s floating gate. The effective floating gate voltage is determined analytically using the coupling capacitances and the floating gate charge. With this method write time simulation is performed. Making use of selfconsistent trapping calculation, available in our version of MINIMOS, EEPROM write time degradation due to electron trapping in the gate oxide layer is estimated.