Abstract
For device models which consider energy transport the modeling of the flux components due to spatially inhomogeneous carrier temperatures is still a controversial issue. In this paper the influence of these flux components on device and circuit performance is evaluated by the example of a state of the art bipolar technology using mixed level 2D-device/circuit simulation.
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References
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© 1993 Springer-Verlag Wien
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Stecher, M., Meinerzhagen, B., Bork, I., Engl, W.L. (1993). On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_11
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_11
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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