Carrier transport has been described in the previous chapters in terms of fields, i.e. in terms of physical quantities that are defined continuously for all points in space (and time) in the simulation domain. In the drift-diffusion transport model, for instance, the state of a semiconductor device is described by the electron and hole concentration fields and the potential field. It is the task of device simulation to solve the transport equations according to the input of geometry, doping, and boundary conditions; the primary result of the simulation is the distribution of the fields inside the device. Additional information, like for instance the terminal currents, can be computed from the fields in a post-processing step.
KeywordsDirichlet Boundary Condition Interface Condition Neumann Boundary Condition Simulation Domain Schottky Contact
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