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Simulation of Semiconductor Devices and Processes pp 143–146Cite as

Three-Dimensional Integrated Process Simulator: 3D-MIPS

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Abstract

We have developed a three-dimensional integrated process simulator of topography and impurity: 3D-MIPS. 3D-MIPS includes topography and impurity simulator, which can simulate deposition, etching, photolithography, BPSG flow, ion implantation, oxidation and impurity diffusion. The diffusion model, in particular, uses a novel equation which unifies diffusion and segregation. In this paper, these models and their simulation results are presented, and we demonstrate that it is possible to simulate 3D-complicated structures stably.

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References

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Author information

Authors and Affiliations

  1. ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664, Japan

    M. Fujinaga, T. Kunikiyo, T. Uchida, K. Kamon, N. Kotani & T. Hirao

Authors
  1. M. Fujinaga
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  2. T. Kunikiyo
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  3. T. Uchida
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  4. K. Kamon
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  5. N. Kotani
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  6. T. Hirao
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

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© 1995 Springer-Verlag Wien

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Cite this paper

Fujinaga, M., Kunikiyo, T., Uchida, T., Kamon, K., Kotani, N., Hirao, T. (1995). Three-Dimensional Integrated Process Simulator: 3D-MIPS. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_33

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_33

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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