Abstract
A new 3-dimensional cellular automata method is presented which improves the numerical efficiency of standard Monte-Carlo codes by keeping the physical accuracy. With both methods calculated results of stationary and time-dependent bulk transport quantities of GaAs and stationary transport characteristics of a GaAs-IMPATT-diode for D-Band applications will be presented and compared in detail.
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References
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M. Tschernitz et al, ”GaAs Read-type IMPATT-diode for D-Band”, Electronics Letters, 30, 1070 (1994).
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© 1995 Springer-Verlag Wien
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Liebig, D. (1995). Cellular Automata Simulation of GaAs-IMPATT-Diodes. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_17
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_17
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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