Abstract
GaAlAs is a basic material in semiconductor technology and thus of great interest for industrial research. Several Ga1-xAlxAs bulk samples of predefined composition as well as layered samples of well defined thicknesses and composition were investigated. The experimental data are analyzed with a computer program, which has been developed at the Institute for Applied and Technical Physics at the Technical University of Vienna. Furthermore, analysis of the bulk samples using the program PAP of Pouchou and Pichoir is carried out. An excellent agreement of both correction procedures with the defined composition values is obtained. The determined layer thicknesses also correspond well with the defined data.
For our calculations the total K-peak of aluminum and the total L-peak of gallium and arsenic were measured. Reducing the L-intensities by the already published relative intensity factor for La radiation leads to less correspondence of the calculated k-ratios compared to the measured values. By additionally regarding the emerging Lß intensities with partly much higher mass absorption coefficients than the corresponding values for Lα radiation a dramatic improvement is achieved.
To whom correspondence should be addressed
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
H.-J. August, J. Wernisch, X-Ray Spectrometry 1991, 20, 131.
H.-J. August, J. Wernisch, X-Ray Spectrometry 1991, 20, 141.
J.-L. Pouchou, F. Pichoir, Electron Probe Quantitation (K. F. J. Heinrich, D. E. Newbury, eds.), Plenum, New York, 1991, pp. 31–76.
K. Röhrbacher, M. Andrae, P. Klein, J. Wernisch, Mikrochim. Acta [Suppl.] 1996, 13, 507.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Springer-Verlag Wien
About this paper
Cite this paper
Röhrbacher, K., Klein, P., Andrae, M., Wernisch, J. (1996). Measurements of Ga1-xAlxAs Layers on GaAs with EDS. In: Benoit, D., Bresse, JF., Van’t dack, L., Werner, H., Wernisch, J. (eds) Microbeam and Nanobeam Analysis. Mikrochimica Acta Supplement, vol 13. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6555-3_44
Download citation
DOI: https://doi.org/10.1007/978-3-7091-6555-3_44
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-82874-8
Online ISBN: 978-3-7091-6555-3
eBook Packages: Springer Book Archive