Abstract
Advanced n-MOSFET structure with featured size of 90nm channel length is simulated using a newly developed Quantum Mechanical (QM) correction model based on Modified Airy Function (MAF) method. The influences of Quantum Mechanical Effects (QMEs) on the carrier distribution in the whole channel is included and the output as well as the transfer characteristics are compared with and without QM correction. It is demonstrated that QMEs result in more severe short channel effects such as threshold voltage roll off and DIBL effects.
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© 2001 Springer-Verlag Wien
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Ma, Y. et al. (2001). Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2-D Characteristics. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_89
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_89
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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