Abstract
We report on the enhanced diffusion characteristics of phosphorus in SEG(selective epitaxial growth)-MOSFETs due to in-diffusion from BPSG (borophosphosilicate glass) layer. Because of structural complexity of SEGMOSFETs, three-dimensional simulation was implemented and our results successfully show that a great deal of impurity in-diffusion from BPSG to silicon layer generates a lot of interstitial. Therefore, the diffusivity of phosphorus is increased dramatically by TED effect, causing the characteristics of SEGMOSFETs is degraded severely.
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© 2001 Springer-Verlag Wien
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Lee, J., Cheong, WS., Choi, JH., Om, JC. (2001). Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_61
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_61
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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