Abstract
A 2D analytical model for the calculation of the subthreshold slope has been derived for deep-submicron Fully-Depleted SOI MOSFET’s using a Green’s function solution technique. The accuracy of the equations has been verified by a 2D numerical device simulator. It is shown that the analytically derived model for the subthreshold slope is in good agreement with 2D numerical simulation data.
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References
Wouters, D.J., Colinge, J.P., Maes, H.E., “Subthreshold slope in thin-film SOI MOSFET’s”, IEEE Trans. Electron Devices, Vol. 37, No. 9, pp. 2022–2033, 1990.
Balestra, F., Benachir, M., Brini, J., Ghibaudo, G., “Analytical models of subthreshold swing and threshold voltage for thin-and ultra-thin-film SOI MOSFETs”, IEEE Trans. Electron Devices, Vol. 37, No. 11, pp. 2303–2311, 1990.
Joachim, H.-O., Yamaguchi, Y., Ishikawa, K., Inoue, Y., Nishimura, T., “Simulation and two-dimensional analytical modeling of subthreshold slope in ultrathin-film SOI MOSFETs down to 0.1 gm gate length”, IEEE Trans. on Electron. Devices, Vol. 40, No. 10, pp. 1812–1817, 1993.
Biesemans, S., De Meyer, K., “Analytical calculation of subthreshold slope increase in short-channel MOSFET’s by taking drift component into account”, Jpn. J. Appl. Phys, Vol. 34, No. 2B, pp. 917–920, 1995.
Guo, J.-Y., Wu, C.-Y., “A new 2-D analytic threshold-voltage model for fully depleted short-channel SOI MOSFET’s”, IEEE Trans. on Electron. Devices, Vol. 40, No. 9, pp. 1653–1661, 1993.
MEDICI, V4.0, Technology Modeling Associates, Inc., Palo Alto, 1998.
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© 2001 Springer-Verlag Wien
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Meer, H.V., Meyer, K.D. (2001). Two-Dimensional Model for the Subthreshold Slope in Deep-Submicron Fully-Depleted SOI MOSFET’s. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_52
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_52
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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