Abstract
We propose a harmonic balance technique for the frequency-domain analysis of MOSFET operation. Our approach is based on the charge-sheet and the non-quasistatic(NQS) MOSFET models in the channel region with the harmonic balance(HB) technique applied to the channel charges. Lateral field effect is considered in the formulation to analyze the short channel MOSFET devices. It is shown that the proposed method renders a computationally efficient tool to analyze the harmonic distortion occurrence in the MOSFET devices due to the nonlinear response of the channel charges.
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© 2001 Springer-Verlag Wien
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Lee, KI., Kim, J., Shin, H., Lee, C., Park, Y.J., Min, H.S. (2001). An Efficient Frequency-Domain Analysis Technique of MOSFET Operation. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_41
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_41
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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