Abstract
We shall here present numerical results from a two-dimensional simulation of a silicon MOS-transistor in order to highlight the structure of solutions of the static device problem and to demonstrate the power of the presented numerical methods and the state of the art in device modeling.
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References
Schütz, A.: Simulation des Lawinendurchbruchs in MOS-Transistoren. Dissertation, Technische Universität Wien, Austria, 1982.
Selberherr, S.: Two Dimensional Modeling of MOS-Transistors. Dissertation, TU Wien, translated by Semiconductor Physics Inc., Escondido, Cal., 1982.
Sze, S. M.: Physics of Semiconductor Devices, 2nd ed. Cambridge—New York: J. Wiley 1981.
Überhuber, C. et al.: MOSPLOT: A Software Package for the Graphical Presentation of MINIMOS Results. Report, Institut für Angewandte und Numerische Mathematik, Technische Universität Wien, Austria, 1985.
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© 1986 Springer-Verlag Wien
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Markowich, P.A. (1986). Numerical Simulation — A Case Study. In: The Stationary Semiconductor Device Equations. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-3678-2_6
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DOI: https://doi.org/10.1007/978-3-7091-3678-2_6
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-99937-0
Online ISBN: 978-3-7091-3678-2
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