Abstract
Several models for B diffusion in Si1-x Gex have been proposed [1, 2]. In order to help discriminate between the models, an experiment was performed. Preamorphized Si wafers were implanted with varying doses of Ge, followed by a B implant. Samples were annealed at several temperatures. Ge implanted samples showed an increase in the B profile peak magnitude with anneal time, as well as its shift towards the surface. Control samples, receiving two Si implants, showed the expected enhanced B diffusion and none of the uphill diffusion behavior. Simulations accounting for the formation of GeB complex show qualitative fit to the measured profiles.
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© 2004 Springer-Verlag Wien
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Radic, L., Saavedra, A.F., Law, M.E. (2004). Modeling B Uphill Diffusion in the Presence of Ge. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_8
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_8
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