Abstract
We report studies of quantum transport in double gate Si MOSFETs (DG MOSFETs) based upon a full-2D tight-binding Green’s function method. As a result, it is found that the I—V characteristics is quite different when a realistic band structure with 6 valleys is taken into account compared with the case of isotropic effective mass. More importantly, it is also found that the carriers flow not only in the lowest subband but also the second lowest one around the drain region, which cannot be expressed in conventional quantum correction methods.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
A. Ascnov et al., Solid-St. Electron., 47, (2003), 1141.
M. Ogawa et al., Ext. Abst. S1SPAD 2002, (2002) 261; IE1CE Trans. Electron, E86-C, (2003)363.
R. Venugopal et al., J. Appl. Phys., 92, (2003), 3730.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2004 Springer-Verlag Wien
About this paper
Cite this paper
Ogawa, M., Kagotani, N., Ohta, M., Miyoshi, T. (2004). Quantum Mechanical Simulation in DG MOSFETs Based on a Tight Binding Green’s Function Formalism. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_7
Download citation
DOI: https://doi.org/10.1007/978-3-7091-0624-2_7
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
eBook Packages: Springer Book Archive