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Very High Performance, Sub-20nm, Strained Si and Six Ge1-x, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs

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Simulation of Semiconductor Processes and Devices 2004

Abstract

We present novel, very high performance, NMOS and PMOS strained-Si and SixGe(1_x) heterostructure DGFETs suitable for scaling to sub-20nm dimensions. 1-D Poisson-Schrodinger simulations show that the devices exhibit Center-Channel (CC) operation. Full-Band Monte Carlo simulations show a ~50% increase in drive currents and ~2X increase in switching speeds at lower capacitance compared to conventional Si DGFETs. The cut-off frequencies for the devices are in the terahertz regime, making the device also well suited for analog applications.

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Author information

Authors and Affiliations

  1. Department of Electrical Engineering, Stanford University, Stanford, CA, 94305

    Tejas Krishnamohan & Krishna C. Saraswat

  2. Technical University of Braunschweig, Braunschweig, Germany

    Christoph Jungemann

Authors
  1. Tejas Krishnamohan
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  2. Christoph Jungemann
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  3. Krishna C. Saraswat
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Editor information

Editors and Affiliations

  1. Lehrstuhl für Technische Elektrophysik, Technische Universität München, Munich, Federal Republic of Germany

    Gerhard Wachutka  & Gabriele Schrag  & 

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© 2004 Springer-Verlag Wien

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Krishnamohan, T., Jungemann, C., Saraswat, K.C. (2004). Very High Performance, Sub-20nm, Strained Si and Six Ge1-x, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_43

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  • DOI: https://doi.org/10.1007/978-3-7091-0624-2_43

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7212-4

  • Online ISBN: 978-3-7091-0624-2

  • eBook Packages: Springer Book Archive

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