Abstract
In this paper, we investigated the quantization in the MOSFET inversion layer by solving the Schrödinger EQuation (SEQ) in the momentum space according to the 3D Full Band (FB) structure of silicon. For the first time, we explain the dependence of the eigenvalues on the momentum k in the plane of transport and discuss its periodicity. Furthermore, we discuss the solution of the SEQ around the energy minima, compare the Non-Parabolic model with the FB results, and propose a new efficient procedure to achieve an accurate energy dispersion in the subbands.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
M. Lundstrom et al., in IEDM Tech. Dig., p. 789, 2004.
A. Svizhenko et al., in TED. Vol.50, n.6, p. 1459, 2003.
J.M. Luttinger et al., in Physical Review, Vol.97, n.4, p. 869, 1955.
J.R. Chelikowsky et al., in Physical Review B, Vol.14, n.2, p. 556, 1976.
M.V. Fischetti et al., in Phys.Rev.B, Vol.48, n.4, p. 2244,1993.
H. Takeda et al., in Journal of Comput. Electr., Vol.1, p. 467, 2002.
C. Jungemann et al., in Solid state Electr., Vol.36, n.11, p. 1529,1993.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2004 Springer-Verlag Wien
About this paper
Cite this paper
Esseni, D., Palestri, P. (2004). Full Band and Approximated Solutions of the Schrödinger Equation in Silicon Inversion layers. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_4
Download citation
DOI: https://doi.org/10.1007/978-3-7091-0624-2_4
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
eBook Packages: Springer Book Archive