Theoretical Analysis of Stress and Surface Orientation Effects on Inversion Carrier Mobility

Abstract

We performed a theoretical analysis of the stress and surface orientation effects on inversion carrier mobility modulation using a quantum mechanical carrier transport simulator that incorporates intra-valley acoustic phonons, inter-valley optical phonons, surface roughness, and impurity scattering mechanisms. The eigenstates of the inversion carrier were calculated using a pseudo-potential method with strain effects. Our simulation method successfully captures both the stress and surface orientation effects. Mobility analysis on (001) and (011) planes under (100) uniaxial stress revealed that tensile stress can recover (011) electron mobility to (001) surface value, and can improve hole mobility on the (011) surface.