Abstract
Indium (In) diffusion and dose-loss in silicon is modeled in a continuum simulator. The model includes the large segregation of In to End of Range (EOR) defects, and the dissolution of these defects resulting in dose-loss of In at the surface. The models developed are successfully applied to predict state of the art (90 nm) transistor performance.
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© 2004 Springer-Verlag Wien
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Chakravarthi, S., Chidambaram, P.R., Hornung, B., Machala, C.F. (2004). Continuum Modeling of Indium to Predict SSR Profiles. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_12
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_12
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
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