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Boron Diffusion in Strained and Strain-Relaxed SiGe

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Simulation of Semiconductor Processes and Devices 2004

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Abstract

SiGe has been utilized for aggressive CMOS technologies development recently and there are many literatures talking about the advantages brought by it. However, few publications discuss the impacts from both mechanical strain and Ge doping on boron diffusion. Moreover these effects have mostly been studied at low boron concentrations and with long high temperature anneals. They are not the possible conditions used in aggressive CMOS technologies. An experiment has been therefore designed to investigate boron diffusion in both strained and strain-relaxed SiGe including ultra-low energy, high concentration boron implant and spike RTA. Summarily, this paper describes the experiments, calibration and resulting diffusion constants for an ultra-shallow boron junction in SiGe that is popular in advanced CMOS technology.

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Author information

Authors and Affiliations

  1. TCAD project, Device Engineering Division, R&D, Hsin-Chu, Taiwan, 300-77, ROC

    C. C. Wang, T. Y. Huang & Y. M. Sheu

  2. Philips Research Leuven, Kapeldreef 75, 3001, Leuven, Belgium

    Ray Duffy & Anco Heringa

  3. Advanced Technology Institute, University of Surrey, Surrey, GU2 7XH, UK

    N. E. B. Cowern

  4. Center for Integrated Systems, Stanford University, Stanford, CA, 94305-4070, USA

    Peter B. Griffin

  5. Advanced Device Engineering Department, Logic Technology Division, R&D Taiwan Semiconductor Manufacturing Company, Hsin-Chu, Taiwan, 300-77, ROC

    Carlos H. Diaz

Authors
  1. C. C. Wang
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  2. T. Y. Huang
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  3. Y. M. Sheu
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  4. Ray Duffy
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  5. Anco Heringa
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  6. N. E. B. Cowern
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  7. Peter B. Griffin
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  8. Carlos H. Diaz
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Editor information

Editors and Affiliations

  1. Lehrstuhl für Technische Elektrophysik, Technische Universität München, Munich, Federal Republic of Germany

    Gerhard Wachutka  & Gabriele Schrag  & 

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© 2004 Springer-Verlag Wien

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Wang, C.C. et al. (2004). Boron Diffusion in Strained and Strain-Relaxed SiGe. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_10

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  • DOI: https://doi.org/10.1007/978-3-7091-0624-2_10

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7212-4

  • Online ISBN: 978-3-7091-0624-2

  • eBook Packages: Springer Book Archive

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