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Quantum Anomalous Hall Effect

  • Jinsong ZhangEmail author
Chapter
Part of the Springer Theses book series (Springer Theses)

Abstract

In this chapter, we report the observation of the quantum anomalous Hall effect (QAHE) in Cr-doped (Bi,Sb)2Te3 TI thin films grown by MBE method. At zero magnetic field and ultralow temperature (30 mK), the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e 2, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field (up to 18 T), the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value.

Keywords

Dirac Point Quantum Hall Effect Spin Susceptibility Anomalous Hall Effect Hall Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  1. 1.Tsinghua UniversityBeijingChina

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