Abstract
This paper performs the structure and principle of SOI Lateral PIN photodiode Gated by Transparent Electrode. The temperature models of photocurrent and dark current are presented and validated by 2D ATLAS simulation. The variation of temperature on sensitivity is addressed when the LPIN PD-GTE is fully depleted. In contrast, the same work is presented on SOI Lateral PIN photo diode. The simulated results indicate the internal quantum efficiency of SOI LPIN PD-GTE remains about (95 %) with illumination of 400 nm wavelength as the temperature rises while the signal-noise-ratio decreases. SNR achieves \(10^7\) at 300 K and decreases to \(10^3\) at 473 K. FHWM is almost unchanged varing the temperatures. Thus, the sensitivity decreases when the temperature rises. Still, considering the fact that the operating temperature of the device generally cannot be 473 K or higher, SOI Lateral PD-GTE can be used at high temperature with good sensitivity.
Y. Zeng—This work has been supported by the National Natural Science Foudation of China (NO.6350007).
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References
Abid, K., Rahman, F.: Gated lateral p-i-n junction device for light sensing. IEEE Photo. Tech. Lett. 23, 911–913 (2011)
Mueller, T., Xia, F.N., Avouris, P.: Graphene photodetectors for high-speed optical communications. Nat. Photo 4, 297–301 (2010)
Afzalian, A., Flandre, D.: Measurements, modeling and electrical simulations of lateral PIN photodiodes in thin film-SOI for high quantum efficiency and high selectivity in the UV range. In: Proceedings of ESSDERC Conference, 16–18 Sep 2003, pp. 55–58. Portugal (2003)
Afzalian, A., Flander, D.: Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodiodes. Solid State Electron. 51, 337–342 (2007)
Zeng, Y., Xie, H.Q., Huang, W.Q., Zhang, G.L.: Physical model of lateral PIN photodiode gated by a transparent electrode fabricated on SOI film. Opt. Photon. Lett. 2, 15–20 (2009)
Li, G.L., Zeng, Y., Hu, W.H., Zou, Y., Xia, Y.: Operation of thin-film gated SOI lateral PIN photodetectors with gate voltage applied and intrinsic length variation. Optik 125, 6483–6487 (2014)
Csutak, S., Schaub, J., Wu, W., Campbell, J.: CMOS-compatible high speed planar silicon photodiodes fabricated on SOI substrates. IEEE J. Quantum Electron. 38(2), 193–196 (2002)
Zeng, Y., et al.: Threshold voltage in short-channel SOI BJMOSFET. J. Funct. Mater. Devices 14(4), 831–834 (2008)
Xie, H.Q., Zeng, Y., Zeng, J.P., Wang, T.H.: Analysis and simulation of lateral PIN photodiode gated by transparent electrode fabricated on fully-depleted SOI film. J. Cent. South Univ. Technol. 18, 744–748 (2011)
Sze, S.M., Ng, K.K.: Physics of Semiconductor Device. Wiley Interscience, Hoboken (2007)
Zeng, Y., Xia, Y., Hu, W., Li, G., Peng, W.: Modeling and electrical simulations of thin-film gated SOI lateral PIN photodetectors for high sensitivity and speed performances. In: Xu, W., Xiao, L., Zhang, C., Li, J., Yu, L. (eds.) NCCET 2013. CCIS, vol. 396, pp. 235–243. Springer, Heidelberg (2013)
Li, G.L., Zeng, Y., Hu, W., Xia, Y.: Analysis and simulation for current-voltage models of thin-film gated SOI lateral PIN photodetectors. Optik 125, 540–544 (2014)
Afzalian, A., Flandre, D.: Physical modeling and design of thin-film SOI lateral PIN photodetectors. IEEE Trans. Electron Devices 52, 1116–1122 (2005)
Atlas Users Manual Device Simulation Software. SILVACO Inc. (2010)
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Wang, B., Zeng, Y., Li, G., Xia, Y., Xu, H., Huang, C. (2016). Analysis and Simulation of Temperature Characteristic of Sensitivity for SOI Lateral PIN Photodiode Gated by Transparent Electrode. In: Xu, W., Xiao, L., Li, J., Zhang, C. (eds) Computer Engineering and Technology. NCCET 2015. Communications in Computer and Information Science, vol 592. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-49283-3_17
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DOI: https://doi.org/10.1007/978-3-662-49283-3_17
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