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Applications of Nanotechnology in Next-Generation Nonvolatile Memories

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Book cover Introduction to Nano

Part of the book series: Engineering Materials ((ENG.MAT.))

Abstract

With the conventional MOS Non-Volatile Memory (NVM) devices nearing its limits due to scaling issues; many new devices, advanced structures and materials are being explored for their memory applications. The advanced MOSFET NVMs like the nanocrystal embedded gate dielectric Double Gate (DG) MOS, FinFET and Gate all around (GAA) MOSFET are expected to be integrated in the 3-Dimensional ICs by 2015. Also another class of NVMs which operate based on rather different phenomena than charge trapping (as in MOS devices) has come to the fore in recent years. This new generation of NVMs include the Resistive RAM (RRAM), Ferro FET (FeFET), Spin Torque Transfer (STT)-RAM, CNT/Graphene based memories, CNT mass transport and NEMS NVM etc. Such devices depend on processes like resistive switching, ferroelectric hysteresis, spin-torque transfer and tunneling magnetoresistance modulation, nano manipulation, cantilever actuation and so on. These new NVMs offer considerably faster switching, low power and denser and longer data storage capabilities than the present MOS NVMs. Also the advances in nanofabrication techniques have brought about possibilities of realizing complex multi-layer and 3-D structures with great accuracy. All these developments in materials and design are all set to revolutionize the memory technology. The underlying physics and the quantum effects in such next generation NVM devices are a truly intriguing field of study as well. Various models have been proposed and many new ones are being put forward to study the electron tunneling currents nanocrystal embedded gate advanced MOSFET NVMs, the filament formation mechanisms in RRAM, the spin torque transfer in MRRAM and the various other physical phenomena in such devices. This Chapter provides a comprehensive and up-to date review on the recent developments in the field of NVM devices, discussing new memory devices, architectures and novel data storage mechanisms, with in depth discussions regarding the physics based modeling of such memory cells.

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  1. School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, Howrah, 711103, India

    Amretashis Sengupta

  2. Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata, 700032, India

    Bikash Sharma & Chandan Kumar Sarkar

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  1. Amretashis Sengupta
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    Amretashis Sengupta

  2. Dept Electronics & Telecommunication Eng, Jadavpur University, Kolkata, India

    Chandan Kumar Sarkar

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Sengupta, A., Sharma, B., Sarkar, C.K. (2015). Applications of Nanotechnology in Next-Generation Nonvolatile Memories. In: Sengupta, A., Sarkar, C. (eds) Introduction to Nano. Engineering Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-47314-6_8

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