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BDOPV—A Strong Electron-Deficient Building Block for Polymer Field-Effect Transistors

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Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors

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Abstract

The scarcity of strong electron-deficient building blocks is probably the main reason that hinders the development of n-type organic semiconductors. To decrease the polymer LUMO level, we choose isoindigo as a basic structure to extend its conjugated backbone and obtain a new strong electron-deficient building block—BDOPV. By application of some strategies successfully used in isoindigo polymers, BDOPV-based polymers exhibit high mobility and good stability in n-type and ambipolar FETs.

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  1. Department of Chemical Engineering, Stanford University, Stanford, CA, USA

    Ting Lei

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Lei, T. (2015). BDOPV—A Strong Electron-Deficient Building Block for Polymer Field-Effect Transistors. In: Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-45667-5_4

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