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MAST: Multi-Level Associated Sector Translation for NAND Flash Memory-Based Storage System

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Computer Science and its Applications

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 330))

Abstract

NAND flash memories have been widely adopted as storage on computing devices, since it has strong effectiveness on performance. However, asymmetric operation performance of NAND flash memories still impedes high performance. To mitigate this performance hurdle, most storage devices of NAND flash memories have used Flash Translation Layer (FTL). In this paper, we propose a novel workload-aware FTL mapping policy, called Multi-level Associated Sector Translation (MAST). MAST divides log block depending on characteristics of data, and dynamically detects hot pages to avoid unnecessary merge operations of FTL. In experimental results, we show that our approach outperforms FAST method by 10% and LAST by 3%, respectively.

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Correspondence to Jeehong Kim .

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Kim, J., Kang, D.H., Ha, B., Cho, H., Eom, Y.I. (2015). MAST: Multi-Level Associated Sector Translation for NAND Flash Memory-Based Storage System. In: Park, J., Stojmenovic, I., Jeong, H., Yi, G. (eds) Computer Science and its Applications. Lecture Notes in Electrical Engineering, vol 330. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-45402-2_116

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  • DOI: https://doi.org/10.1007/978-3-662-45402-2_116

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-45401-5

  • Online ISBN: 978-3-662-45402-2

  • eBook Packages: EngineeringEngineering (R0)

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