Chapter

X-Ray Absorption Spectroscopy of Semiconductors

Volume 190 of the series Springer Series in Optical Sciences pp 223-246

Date:

Group IV Nanowires

  • Xuhui SunAffiliated withSoochow University-Western University Centre for Synchrotron Radiation Research, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University Email author 
  • , Tsun-Kong ShamAffiliated withDepartment of Chemistry, Soochow University-Western University Joint Centre for Synchrotron Radiation Research, University of Western Ontario Email author 

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Abstract

X-ray absorption fine structure spectroscopy and related techniques such as X-ray emission spectroscopy and X-ray Excited Optical luminescence play a significant role in understanding the electronic structures of group IV semiconductor nanowires. This chapter reviews how these techniques have been recently used to reveal the unique properties of group IV semiconductor nanowires, especially silicon and germanium, and their oxides. Other group IV nanowires, such as carbon and tin nanowires are also noted.