Abstract
In Chap. 11, it was demonstrated that confining the optical field to the region of the laser in which the inverted population exists results in a substantial reduction of threshold current density and a corresponding increase in efficiency. As early as 1963, it was proposed that heterojunctions could be used to produce a waveguiding structure with the desired property of optical confinement [12.1, 2]. At about the same time, others proposed using a heterojunction laser structure not for optical field confinement, but to produce higher carrier injection efficiency at the p-n junction, and to confine the carriers to the junction region [12.3, 4]. Actually, all three of these mechanisms are present in a heterostructure laser, and their combined effects result in a device that is vastly superior to the basic p-n homojunc-tion laser.
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Supplementary Reading
Butler, J. K. (ed. ): Semiconductor Injection Lasers (IEEE Press, New York 1980)
Casey, H. C., Jr., Panish, M. B.: Heterostructure Lasers (Academic Press, New York 1978)
Kressel, H. (ed. ): Semiconductor Devices for Optical Communication, 2nd ed., Topics Appl. Phys., Vol. 39 (Springer-Verlag, Berlin, Heidelberg, New York 1982) Chap. 2 Kressel, H., Butler, J. K.: Semiconductor Lasers and Heterojunction LEDs (Academic Press, New York 1977)
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Hunsperger, R.G. (1984). Heterostructure, Confined-Field Lasers. In: Integrated Optics: Theory and Technology. Springer Series in Optical Sciences, vol 33. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-13565-5_12
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