Abstract
This paper deals with the photovoltaic behaviour of indium tin oxide (ITO)/silicon (single crystal) heterojunctions prepared by spray pyrolysis technique. The dependence of the photovoltaic properties on process temperature (Tp) and on the oxidation time (tox) have been studied. ITO on p-Si yielded ohmic ox contact. A photoconversion efficiency of 9.4% is .H observed (under GE-E2LH illumination of 100 2mW/cm2) for both small (0.04 cm2) and large (1.0 cm2) areas of ITO/n-Si junctions prepared at a temperature of 380°C and for an oxidation time of 60 sec. The junctions are observed to be quite stable with time. An attempt is made to understand the interfacial oxide layer (SiOx) and its effect on the photoconversion in these junctions.
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© 1991 Springer Science+Business Media New York
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Subrahmanyam, A., Vasu, V. (1991). Studies on ITO/Si Junctions Prepared by Spray Pyrolysis Technique. In: Radhakrishna, S., Daud, A. (eds) Solid State Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09935-3_18
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DOI: https://doi.org/10.1007/978-3-662-09935-3_18
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