Abstract
Molecular Beam Epitaxy (MBE) has become a well-established technique for the growth of ultra-thin films and devices with precise control of thickness, doping concentration and composition. The importance of MBE, basic growth processes, different forms of MBE and some of its recent applications are described in this review article.
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References
Davey, J.E. and Pankey, T.J. (1968). Journal of Applied Physics, 39, P. 1941.
Arthur, J.R. (1974). Surface Science, 43, P. 449.
Cho, A.Y. and Arthur, J.R. (1975). Progress in Solid State Chemistry, 10, P. 157.
Ilegems, M. (1977). Journal of Applied Physics, 48, P. 1278.
Robinson, J.Y. and Ilegems, M. (1978). Reviews of Scientific Instrumentation, 49, P. 205.
Gossard, A.C. (1982). Thin solid Films, 49, P. 205.
Chang, L.L., Esaki, L., Howard, W.E., Ludeke, R. and Schul, G. (1973). Journal of Vacuum Science and Technology, 10, P. 655.
Ploog, K. (1980). Crystal Growth Propagation Application, 3, P. 73.
Joyce, B.A. and Foxon, C.T. (1975). Journal of Crystal Growth, 31, P. 122.
Holloway, H. and Walpole, J.N. (1979). Progress in Crystal Growth and characterization, 2, P. 122.
Neare, J.H., Joyce, B.A., Dobson, P.J. and Norton, N. (1983). Applied Physics, A, 31, P. 1.
Cho, A.Y. (1980). Growth and Properties of III-V semiconductors by MBE, 27, P. 191.
Arthur, J.R. (1968). Journal of Applied Physics, 39, P. 4032.
Nears, J.H. and Dobson, P.J. (1985). Applied Physics Letters, 47, P. 100.
Suntola, T. and Ayvarinen, J. (1985). Annual Review of Materials Science, 15, P. 177.
Herman, M.A, (1991) Vacuum, 42, P. 61.
Chikara, A. (1985). Journal of Applied Physics, 58, P. 2780.
Tung, P.N. (1982). Electron Letters, 10, P. 3.
Peng, C.R. and Rlem, J. (1987). Journal of Crystal Growth, 81, P. 359.
Miller, D.L. and Asbeck, P.M. (1987). Journal of Crystal Growth, 81, P. 368.
Dingle, R. (1975). Advances in Solid State Physics, 15, P. 21.
Delagebeadenf, D. and Linh, N.T. (1982). IEEE Transaction on Electron Devices, 29, P. 955.
Panish, M.B. (1987). Journal of Crystal Grwoth, 81, P. 249.
Tsni, D.C., Shur, M.S., Drummond, T.J. and Morkoc, H. (1983). Journal of Applied Physics, 54, P. 6432.
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© 1991 Springer Science+Business Media New York
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Vaya, P.R., Ponnuraju, K. (1991). Molecular Beam Epitaxy. In: Radhakrishna, S., Daud, A. (eds) Solid State Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09935-3_17
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DOI: https://doi.org/10.1007/978-3-662-09935-3_17
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-662-09937-7
Online ISBN: 978-3-662-09935-3
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