Abstract
Hybrid focal plane arrays using PV HgCdTe have been developed in 128×128 and 256×256 formats mated through indium interconnects to Si CMOS readouts. The band of response for these arrays range from 0.8 – 2.5 micróns with pixel sizes of 40microns × 40 microns for the 256×256 and 60×60 for the 128×128 arrays. Mean dark currents lower than 5e- /s at 77K and 0.2- /s at 60K have been measured. Detector noise is typically of the order of 2 E -16 A/Hz at 1Hz under bias of -500V. The arrays exhibit quantum efficiencies of 50%.
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© 1991 Springer Science+Business Media New York
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Shivanandan, K. (1991). Material Characterisation for Infrared Hybrid Arrays. In: Radhakrishna, S., Daud, A. (eds) Solid State Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09935-3_12
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DOI: https://doi.org/10.1007/978-3-662-09935-3_12
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-662-09937-7
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