Abstract
Silicon nitride is widely known for its application in integrated circuit technology as encapsulation material, as interlevel insulator for multilevel metallization, as gate dielectric for field effect transistors including memory devices, as a mask for oxidation, diffusion or ion implantation, for selective etching, and as a capping layer for compound semiconductors. Most of these applications are due to the fact that silicon nitride is an excellent diffusion barrier and a gettering and passivating agent regardless how the films are prepared, whether by atmospheric pressure (APCVD), low pressure (LPCVD), or plasma-enhanced (PECVD) chemical vapor deposition, by sputtering, or by electron-beam evaporation, only to mention a few preparation techniques [1 to 3]. PECVD silicon nitride, in the literature often also just named “plasma” silicon nitride, is in many cases just labeled “pd(PD)” silicon nitride throughout this Chapter 32.
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Krimmel, E.F., Hezel, R., Nohl, U., Bohrer, R. (1991). Application of Silicon Nitride for Solar Cells. In: Pebler, A., Schröder, F. (eds) Si Silicon. Si. Silicium. Silicon (System-Nr. 15), vol S-i / B / 1-5 / 5 / c. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09901-8_32
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