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Materials Science and Engineering of Bulk Silicon Carbides

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SiC Power Materials

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 73))

Abstract

This chapter highlights the main topics related to bulk silicon carbide growth and characterization, specifically for high-power electronics applications, with an emphasis on the practical issues faced by crystal growers. A brief summary is presented of the historical development of SiC from its initial use and method of growth through the evolution of new growth methods and the difficulties encountered in the production of this material. We then focus in detail on the most common method of crystal growth, the modified Lely method or physical vapor transport (PVT). The experimental aspects, in terms of furnace design, etc., are covered in addition to discussions of the primary parameters of crystal growth and their influence on growth rate and crystal quality. Theoretical considerations are presented to describe the PVT process and to provide the theoretical foundation for SiC crystal growth. The dominant defects that occur during growth and their mechanism of generation are discussed. Information is provided on the historical development of crystal growth from inception to commercial production. In addition to the growth of the commonly used n-doped SiC, the growth of p-doped and semi-insulating SiC boules is also presented. Also, the growth of SiC boules using a hightemperature chemical vapor deposition (HTCVD) process is discussed. The principal methods for material analysis (to analyze crystal quality) and defect characterization (to evaluate the nature, density, etc. of defects) are presented. Finally, the state of the art, future trends, and potential market applications are discussed to complete the overview of SiC growth and characterization.

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  1. Graduate Institute of Electro-Optical Engineering, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, ROC

    Zhe Chuan Feng

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Sudarshan, T. (2004). Materials Science and Engineering of Bulk Silicon Carbides. In: Feng, Z.C. (eds) SiC Power Materials. Springer Series in Materials Science, vol 73. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09877-6_1

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