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Gate Oxide Reliability: Physical and Computational Models

  • A. Ghetti
Part of the Springer Series in MATERIALS SCIENCE book series (SSMATERIALS, volume 72)

Abstract

Ensuring that the performance of a microelectronics product remains within the customer’s specifications for a long period of time, or, equally, predicting the working conditions of future generations that guarantee reliable operation becomes increasingly difficult as devices get smaller. The continuous reduction of the gate dielectric physical thickness has raised some questions about the capability of silicon dioxide to continue to meet reliability requirements in future technology generations. In order to address these issues, extensive physical modeling of silicon dioxide breakdown has been carried out to date. This chapter presents the current understanding about gate oxide intrinsic reliability, and discusses the resulting reliability projections. A number of models have been proposed, but a comprehensive model is still lacking. Here, the main physical models will be briefly illustrated. Their basic elements will be discussed in greater detail, with particular attention to possible numerical implementation. Reliability projections provided by different models are then compared to discuss silicon dioxide reliability limits.

Keywords

Gate Voltage Oxide Breakdown Stress Voltage Oxide Field Soft Breakdown 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    W. Weibull, J. Appl. Mech., 18, 293 (1951).Google Scholar
  2. 2.
    R. Degraeve, J. Ogier, R. Bellens, P. Roussel, G. Groeseneken, and H. Maes, IEEE Trans. Electron Dev., 45, 472 (1998).CrossRefGoogle Scholar
  3. 3.
    International technology roadmap for semiconductors, 2001 edition, http://public.itrs.net, 2001.
  4. 4.
    D. DiMaria and J. Stathis, Applied Physics Letters, 74, 1752 (1999).CrossRefGoogle Scholar
  5. 5.
    R. Degraeve, N. Pangon, B. Kaczer, T. Nigam, G. Groeseneken, and A. Naem, in Proc. VLSI Technology Symposium, p. 59, 1999.Google Scholar
  6. 6.
    B. Weir, M. Alam, J. Bude, P. Silverman, A. Ghetti, F. Baumann, P. Diodato, D. Monroe, Y. Ma, M. Brown, A. Hamad, D. Hwang, and P. Manson, Semicond. Sci. Technol., 15, 455 (2000).CrossRefGoogle Scholar
  7. 7.
    K. Okada, Jpn. J. Appl. Phys., 36, 1443 (1997).CrossRefGoogle Scholar
  8. 8.
    J. Wu, L. Register, and E. Rosembaum, in Proc. IRPS Symposium, p. 389, 1999.Google Scholar
  9. 9.
    S. Takagi, N. Yasuda, and A. Toriumi, IEEE Trans. Electron Dev., 46, 348 (1999).CrossRefGoogle Scholar
  10. 10.
    S.-H. Lee, B.-J. Cho, J.-C. Kim, and S.-H. Choi, in IEDM Technical Digest, p. 605, 1994.Google Scholar
  11. 11.
    K. Okada, Semicond. Sci. Technol., 15, 478 (2000).CrossRefGoogle Scholar
  12. 12.
    M. Depas, T. Nigam, and M. Heyns, IEEE Trans. on Electron Devices, 43, 1499 (1996).CrossRefGoogle Scholar
  13. 13.
    B. Weir, P. J. Silverman, D. Monroe, K. Krisch, M. Alam, G. Alers, T. Sorsch, G. Timp, F. Baumann, C. Liu, Y. Ma, and D. Huang, in IEDM Technical Digest, p. 73, 1997.CrossRefGoogle Scholar
  14. 14.
    A. Cester, L. Bandiera, G. Ghidini, I. Bloom, and A. Paccagnella, Solid-State Electronics, 46, 1019 (2002).CrossRefGoogle Scholar
  15. 15.
    E. Miranda, J. Suíié, R. Rodriguez, M. Nafria, and X. Aymerich, IEEE Electron Device Letters, 20, 265 (1999).CrossRefGoogle Scholar
  16. 16.
    P. Olivo, T. Nguyen, and B. Riccil, IEEE Trans. Electron Dev., 35, 2259 (1988).CrossRefGoogle Scholar
  17. 17.
    J. D. Blauwe, J. V. Houdt, D. Wellekens, G. Groeseneken, and H. Maes, IEEE Trans. on Electron Dev., 45, 1745 (1998).CrossRefGoogle Scholar
  18. 18.
    A. Ghetti, Microelectronic Engineering, 59, 127 (2001).CrossRefGoogle Scholar
  19. 19.
    M. Houssa, T. Nigam, P. Mertens, and M. Heyns, Journal of Applied Physics, 84, 4351 (1998).CrossRefGoogle Scholar
  20. 20.
    M. Alam, B. Weir, and P. Silverman, IEEE Trans. on Electron Devices, 49, 232 (2002).CrossRefGoogle Scholar
  21. 21.
    M. Alam, B. Weir, J. Bude, P. Silverman, and A. Ghetti, Microelectronic Engineering, 59, 137 (2001).CrossRefGoogle Scholar
  22. 22.
    P. Nicollian, M. Rodder, D. Crider, P. Chen, R. Wallace, and S. Hattangady, in Proc. IRPS Symposium, p. 400, 1999.Google Scholar
  23. 23.
    A. Ghetti, E. Sangiorgi, J. Bude, T. Sorsch, and G. Weber, IEEE Trans. Electron Dev., 47, 2358 (2000).CrossRefGoogle Scholar
  24. 24.
    S.-L. Lo, D. Buchanan, Y. Taur, and W. Wang, IEEE Electron Dev. Lett., 18, 209 (1997).CrossRefGoogle Scholar
  25. 25.
    C. Bowen, C. Fernando, G. Klimeck, A. Chatterjee, D. Blanks, R. Lake, J. Hu, J. Davis, M. Kulkarni, S. Hattangady, and I. Chen, in IEDM Technical Digest, p. 869, 1997.CrossRefGoogle Scholar
  26. 26.
    J. Suiié, P. Olivo, and B. Riccò, J. Appl. Phys., 70, 337 (1991).CrossRefGoogle Scholar
  27. 27.
    F. Rana, S. Tiwari, and D. Buchanan, Appl. Phys. Lett., 69, 1104 (1996).CrossRefGoogle Scholar
  28. 28.
    N. Yang, W. Henson, J. Hauser, and J. Wortman, IEEE Trans. on Electron Dev., 46, 1464 (1999).CrossRefGoogle Scholar
  29. 29.
    L. Register, E. Rosembaum, and K. Yang, Appl. Phys. Lett., 74, 457 (1999).CrossRefGoogle Scholar
  30. 30.
    K.-N. Yang, H.-T. Huang, M.-C. Chang, C.-M. Chu, Y.-S. Chen, M.-J. Chen, Y.-M. Lin, M.-C. Yu, S. Jang, D. Yu, and M. Liang, IEEE Trans. on Electron Dev., 47, 2161 (2000).CrossRefGoogle Scholar
  31. 31.
    A. Ghetti, J. Bude, P. Silverman, A. Hamad, and H. Vaidya, IEICE Trans. on Electronics, E83-C, 1175 (2000).Google Scholar
  32. 32.
    M. Alam, J. Bude, B. Weir, P. Silverman, A. Ghetti, D. Monroe, K. Cheung, and S. Moccio, in IEDM Techn. Digest, p. 715, 1999.Google Scholar
  33. 33.
    M. Alam, J. Bude, and A. Ghetti, in Proc. IRPS Symposium, p. 21, 2000.Google Scholar
  34. 34.
    C. Moglestue, J. Appl. Phys., 59, 3175 (1986).CrossRefGoogle Scholar
  35. 35.
    H. Massoud and J. Shiely, Microelectronic Engineering, 36, 263 (1997).CrossRefGoogle Scholar
  36. 36.
    A. Pacelli, IEEE Trans. Electron Dev., 44, 1169 (1997).CrossRefGoogle Scholar
  37. 37.
    M. Goano, Solid-State Electron., 36, 217 (1993).CrossRefGoogle Scholar
  38. 38.
    N. Lifshitz, IEEE Trans. Electron Dev., 32, 617 (1985).CrossRefGoogle Scholar
  39. 39.
    K. Gundlach, Solid-State Electron., 9, 949 (1966).CrossRefGoogle Scholar
  40. 40.
    W. Lui and M. Kukuma, J. Appl. Phys., 60, 1555 (1986).CrossRefGoogle Scholar
  41. 41.
    B. Nag, Appl. Phys. Lett., 59, 1620 (1991).Google Scholar
  42. 42.
    A. Ghetti, E. Sangiorgi, T. Sorsch, and I. Kizilyalli, Microelectronic Engineering, 48, 31 (1999).CrossRefGoogle Scholar
  43. 43.
    M. Fischetti, D. DiMaria, S. Bronson, T. Theis, and J. Kirtley, Phys. Rev. B, 31, 8124 (1985).CrossRefGoogle Scholar
  44. 44.
    D. Arnold, E. Cartier, and D. DiMaria, Phys. Rev. B, 49, 10278 (1994).CrossRefGoogle Scholar
  45. 45.
    A. Ghetti, in Proc. SISPAD Conference, p. 231, 2002.Google Scholar
  46. 46.
    M. Lenzlinger and E. Snow, J. Appl. Phys., 40, 278 (1969).CrossRefGoogle Scholar
  47. 47.
    A. Ghetti, C. Liu, M. Mastrapasqua, and E. Sangiorgi, Solid-State Electron., 44, 1523 (2000).CrossRefGoogle Scholar
  48. 48.
    I. Chen, S. Holland, K. Young, C. Chang, and C. Hu, Appl. Phys. Lett., 49, 669 (1986).CrossRefGoogle Scholar
  49. 49.
    C. Chang, C. Hu, and R. Brodersen, J. Appl. Phys., 57, 302 (1985).CrossRefGoogle Scholar
  50. 50.
    S. Takagi, N. Yasuda, and A. Toriumi, IEEE Trans. Electron Dev., 46, 335 (1999).CrossRefGoogle Scholar
  51. 51.
    Y. Kamakura, I. Kawashima, K. Deguchi, and K. Taniguchi, J. Appl. Phys., 88, 5802 (2000).CrossRefGoogle Scholar
  52. 52.
    A. Ghetti, M. Alam, J. Bude, and F. Venturi, in IEDM Technical Digest, p. 873, 1997.Google Scholar
  53. 53.
    A. Ghetti, M. Alam, J. Bude, D. Monroe, E. Sangiorgi, and H. Vaidya, IEEE Trans. Electron Dev., 47, 1341 (2000).CrossRefGoogle Scholar
  54. 54.
    K. Schuegraf and C. Hu, IEEE Trans. Electron Dev., 41, 761 (1994).CrossRefGoogle Scholar
  55. 55.
    K. Kobayashi, A. Teramoto, and M. Hirayama, J. Appl. Phys., 77, 3277 (1995).CrossRefGoogle Scholar
  56. 56.
    P. Palestri, M. Pavesi, P. Rigoli, L. Selmi, A. D. Serra, A. Abramo, F. Widdershoven, and E. Sangiorgi, in IEDM Techn. Digest, p. 97, 2000.Google Scholar
  57. 57.
    A. Halimaoui, O. Briere, and G. Ghibaudo, Microelectronic Engineering, 36, 157 (1997).CrossRefGoogle Scholar
  58. 58.
    D. DiMaria and E. Cartier, J. Appl. Phys., 78, 3883 (1995).CrossRefGoogle Scholar
  59. 59.
    E. Suzuki, D. Schroder, and Y. Hayashi, Journal of Applied Physics, 60, 3616 (1986).CrossRefGoogle Scholar
  60. 60.
    A. Ghetti, M. Alam, J. Bude, E. Sangiorgi, G. Timp, and G. Weber, Proc. of the 4th Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Toronto, Canada, 14–19 May 2000, p. 419 (2000).Google Scholar
  61. 61.
    T.-K. Kang, M.-J. Chen, C.-H. Liu, Y. Chang, and S.-K. Fan, IEEE Trans. Electron Dev., 48, 2317 (2001).CrossRefGoogle Scholar
  62. 62.
    J. Deblauwe, Ph.D. Thesis: IMEC, 1998.Google Scholar
  63. 63.
    D. Dumin and J. Maddux, IEEE Trans. Electron Dev., 40, 986 (1993).CrossRefGoogle Scholar
  64. 64.
    D. DiMaria, D. Arnold, and E. Cartier, J. Appl. Phys., 73, 3367 (1993).CrossRefGoogle Scholar
  65. 65.
    M. Alam, IEEE Trans. on Electron Dev., 49, 226 (2002).CrossRefGoogle Scholar
  66. 66.
    D. Buchanan, J. Stathis, E. Cartier, and D. DiMaria, Microelectronic Engineering, 36, 329 (1997).CrossRefGoogle Scholar
  67. 67.
    J. Stathis and D. DiMaria, in IEDM Technical Digest, p. 167, 1998.Google Scholar
  68. 68.
    J. Suíié, M. Nafria, E. Miranda, X. Oriols, R. Rodriguez, and X. Aymerich, Semicond. Sci. Technol., 15, 445 (2000).CrossRefGoogle Scholar
  69. 69.
    D. DiMaria and J. Stathis, J. Appl. Phys., 89, 5015 (2001).CrossRefGoogle Scholar
  70. 70.
    C. Hu, S. Tam, F. Hsu, P. Ko, T. Chan, and K. Terrill, IEEE Trans. Electron Dev., 32, 375 (1985).CrossRefGoogle Scholar
  71. 71.
    J. D. Bude, A. Frommer, M. R. Pinto, and G. R. Weber, in IEDM Techn. Digest, p. 989, 1995.Google Scholar
  72. 72.
    T. Ning and H. Yu, J. Appl. Phys., 45, 5373 (1974).CrossRefGoogle Scholar
  73. 73.
    L. Selmi, E. Sangiorgi, R. Bez, and B. Riccò, in IEDM Techn. Digest, p. 333, 1993.Google Scholar
  74. 74.
    B. Fischer, A. Ghetti, L. Selmi, R. Bez, and E. Sangiorgi, EEE Trans. Electron Dev., 44, 288 (1997).CrossRefGoogle Scholar
  75. 75.
    T. Ning, C. Osburn, and H. Yu, J. Appl. Phys., 48, 286 (1977).CrossRefGoogle Scholar
  76. 76.
    J. Tang and K. Hess, J. Appl. Phys., 54, 5145 (1983).CrossRefGoogle Scholar
  77. 77.
    M. Fischetti, S. Laux, and E. Crabbé, J. Appl. Phys., 78, 1058 (1995).CrossRefGoogle Scholar
  78. 78.
    A. Ghetti, L. Selmi, E. Sangiorgi, A. Abramo, and F. Venturi, in IEDM Techn. Digest, p 363, 1994.Google Scholar
  79. 79.
    Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, J. Appl. Phys., 60, 2024 (1986).CrossRefGoogle Scholar
  80. 80.
    R. Degraeve, G. Groeseneken, R. Bellens, J.-L. Ogier, M. Depas, P. Roussel, and H. Maes, IEEE Trans. Electron Dev., 45, 904 (1998).CrossRefGoogle Scholar
  81. 81.
    A. Ghetti, J. Bude, and G. Weber, IEEE Trans. Electron Dev., 48, 1354 (2001).CrossRefGoogle Scholar
  82. 82.
    S. Bruyére, D. Roy, E. Robilliart, E. Vincent, and G. Ghibaudo, Microel. Reliability, 41, 1031 (2001).CrossRefGoogle Scholar
  83. 83.
    E. Wu, J. Suné, E. Nowak, W. Lai, and J. McKenna, in IEDM Techn. Digest, p. 125, 2001.Google Scholar
  84. 84.
    S. Bruyére, E. Vincent, and G. Ghibaudo, Proc. IRPS Symposium, p. 48, 2000.Google Scholar
  85. 85.
    E. Wu, W. Abadeer, L.-H. Han, S.-H. Lo, and G. Hueckel, in Proc. IRPS Symposium, p. 57, 1999.Google Scholar
  86. 86.
    M. Alam, B. Weir, and P. Silverman, IEEE Circuits and Devices Magazine, 19, 42 (2002).CrossRefGoogle Scholar
  87. 87.
    R. Degraeve, B. Kaczer, and G. Groeseneken, Semicond. Sci. Technol., 15, 436 (2000).CrossRefGoogle Scholar
  88. 88.
    J. Suné, I. Placentia, N. Barniol, E. Farres, F. Martin, and X. Aymerich, Thin Solid Films, 185, 347 (1990).CrossRefGoogle Scholar
  89. 89.
    R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, and H. Maes, in IEDM Techn. Digest, p. 863, 1995.Google Scholar
  90. 90.
    J. Stathis, Microelectronic Engineering, 36, 325 (1997).CrossRefGoogle Scholar
  91. 91.
    J. Suné, IEEE Electron Dev. Lett., 22, 296 (2001).CrossRefGoogle Scholar
  92. 92.
    J. Stathis, J. Appl. Phys., 86, 5757 (1999).CrossRefGoogle Scholar
  93. 93.
    T. Nigam, R. Degraeve, G. Groeseneken, M. Heyns, and H. Maes, in Proc. IRPS Symposium, p. 381, 1999.Google Scholar
  94. 94.
    M. Alam, B. Weir, P. Silverman, J. Bude, G. Timp, and A. Ghetti, in Proc. of the 4th Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Toronto, Canada, May 14–19, 2000, p. 365–376 (2000).Google Scholar
  95. 95.
    J. Stathis, A. Vayshenker, P. Varekamp, E. Wu, C. Montrose, L. McKenna, D. DiMaria, L.-K. Han, E. Cartier, R. Wachnik, and B. Linder, in Proc. VLSI Technology Symposium, p 94, 2000.Google Scholar
  96. 96.
    J. Stathis, in Proc. IRPS Symposium, p. 132, 2001.Google Scholar
  97. 97.
    E. Wu, E. Novak, L. Kan, D. Dunfresne, and W. Abadeer, in IEDM Techn. Digest, p. 441, 1999.Google Scholar
  98. 98.
    B. Weir, P. Silverman, M. Alam, A. Hamad, T. Oberdick, N. Zhao, F. Baumann, G. Timp, A. Ghetti, Y. Ma, M. Brown, and T. Sorsch, in IEDM Techn. Digest, p. 437, 1999.Google Scholar
  99. 99.
    E. Wu, J. Stathis, and L.-K. Han, Semicond. Sci. Technol., 15, 425 (2000).CrossRefGoogle Scholar
  100. 100.
    I.-C. Chen, S. Holland, and C. Hu, IEEE Trans. Electron Dev., 33, 413 (1985).CrossRefGoogle Scholar
  101. 101.
    I. Chen, S. Holland, and C. Hu, IEEE Electron Dev. Lett., 7, 164 (1986).CrossRefGoogle Scholar
  102. 102.
    K. Schuegraf and C. Hu, Semicond. Sci. Technol., 9, 989 (1994).CrossRefGoogle Scholar
  103. 103.
    J. Bude, B. Weir, and P. Silverman, in IEDM Techn. Digest, p. 179, 1998.Google Scholar
  104. 104.
    A. Ghetti, M. Alam, and J. Bude, Microel. Reliability, 41, 1347 (2001).CrossRefGoogle Scholar
  105. 105.
    M. Fischetti, Phys. Rev. B, 31, 2099 (1985).Google Scholar
  106. 106.
    D. DiMaria, E. Cartier, and D. Buchanan, J. Appl. Phys., 80, 304 (1996).CrossRefGoogle Scholar
  107. 107.
    H. Satake and A. Toriumi, Appl. Phys. Lett., 66, 3516 (1995).CrossRefGoogle Scholar
  108. 108.
    J. McPherson, V. Reddy, K. Banerjee, and H. Le, in IEDM Techn. Digest, p. 171, 1998.Google Scholar
  109. 109.
    A. Yassine, H. Narim, and K. Olasupo, IEEE Electron Dev. Lett., 20, 390 (1999).CrossRefGoogle Scholar
  110. 110.
    D. DiMaria, Appl. Phys. Lett., 68, 3004 (1996).CrossRefGoogle Scholar
  111. 111.
    P. Nicollian, W. Hunter, and J. Hu, in Proc. IRPS Symposium, p. 7, 2000.Google Scholar
  112. 112.
    A. Teramoto, H. Umeda, K. Azamawari, K. Kobayashi, K. Shinga, J. Komori, Y. Ohno, and H. Miyoshi, in Proc. 1RPS Symposium, p. 66, 1999.Google Scholar
  113. 113.
    T. Nigam, Ph.D. Thesis, Dept. Electrotechniek, Katholieke Universiteit Lueuven, May 1999.Google Scholar
  114. 114.
    M. Alam, private communication.Google Scholar
  115. 115.
    E. Nicollian and J. Brews, MOS physics and technology. New York, NJ: Wiley, 1983.Google Scholar
  116. 116.
    R. Stahlbush and E. Cartier, IEEE Trans. Nucl. Sci., 41, 1844 (1994).CrossRefGoogle Scholar
  117. 117.
    D. DiMaria and J. Stasiak, J. Appl. Phys., 65, 2342 (1989).CrossRefGoogle Scholar
  118. 118.
    D. DiMaria, Appl. Phys. Lett., 75, 2427 (1999).CrossRefGoogle Scholar
  119. 119.
    K. Hess, I. Kizilyalli, and J. Lyding, IEEE Trans. Electron Dev., 45, 406 (1998).CrossRefGoogle Scholar
  120. 120.
    J. Wu, E. Rosenbaum, B. MacDonald, E. Li, B. Tracy, and P. Fang, in Proc. IRPS Symposium, p. 27, 2000.Google Scholar
  121. 121.
    Y. Mitani, S. H, H. Itoh, and A. Toriumi, in IEDM Techn. Digest, p. 343, 2001.Google Scholar
  122. 122.
    J. Suné and E. Wu, Microelectronic Engineering, 59, 149 (2001).CrossRefGoogle Scholar
  123. 123.
    J. McPherson and H. Mogul, J. Appl. Phys., 84, 1513 (1998).CrossRefGoogle Scholar
  124. 124.
    E. Vogel, J. Suehle, M. Edelstein, B. Wang, Y. Chen, and J. Bernstein, IEEE Trans. Electron Dev., 47, 1183 (2000).CrossRefGoogle Scholar
  125. 125.
    J. McPherson, R. Khamankar, and A. Shanware, J. Appl. Phys., 88, 5351 (2000).CrossRefGoogle Scholar
  126. 126.
    C. Hu and Q. Lu, in Proc. IRPS Symposium, p. 47, 1999.Google Scholar
  127. 127.
    K. Cheung, Microel. Reliability, 41, 193 (2001).CrossRefGoogle Scholar
  128. 128.
    J. McPherson and R. Khamankar, Semicond. Sci. Technol., 15, 462 (2000).CrossRefGoogle Scholar
  129. 129.
    E. Wu, J. Aitken, E. Novak, A. Vayshenker, P. Varekamp, G. Hueckel, and J. McKenna, in IEDM Techn. Digest, p. 541, 2000.Google Scholar
  130. 130.
    J. Suehle, IEEE Trans. Electron Dev., 49, 958 (2002).CrossRefGoogle Scholar
  131. 131.
    E. Miranda, J. Suné, R. Rodriguez, M. Nafria, X. Aymerich, L. Fonseca, and F. Campabadal, IEEE Trans. Electron Dev., 47, 82 (2000).CrossRefGoogle Scholar
  132. 132.
    T. Pompl, H. Wurzer, M. Kerber, and I. Eisele, Proc. IRPS Symposium, p. 40, 2000.Google Scholar
  133. 133.
    J. Suné, G. Murra, and E. Miranda, IEEE Electron Dev. Lett., 21, 167 (2000).CrossRefGoogle Scholar
  134. 134.
    J. Suehle, E. Vogel, B. Wang, and B. Bernstein, in Proc. IRPS Symposium, p. 33, 2000.Google Scholar
  135. 135.
    M. Alam, B. Weir, J. Bude, P. Silverman, and D. Monroe, in IEDM Techn. Digest, p. 449, 1999.Google Scholar
  136. 136.
    H. Satake and A. Toriumi, Semicond. Sci. Technol., 15, 471 (2000).CrossRefGoogle Scholar
  137. 137.
    J. Suné, E. Wu, D. Jiménez, R. Vollertsen, and E. Miranda, in IEDM Techn. Digest, p. 117, 2001.Google Scholar
  138. 138.
    K. Okada and K. Taniguchi, Appl. Physics Letters, 70, 351 (1997).CrossRefGoogle Scholar
  139. 139.
    J. Suné and E. Miranda, in IEDM Techn. Digest, p. 533, 2000.Google Scholar
  140. 140.
    M. Alam, B. Weir, P. Silverman, Y. Ma, and D. Hwang, in IEDM Techn. Digest, p. 529, 2000.Google Scholar
  141. 141.
    M. Alam, B. Weir, and P. Silverman, IEEE Trans. Electron Dev., 49, 239 (2002).CrossRefGoogle Scholar
  142. 142.
    B. Kaczer, R. Degraeve, M. Rasras, K. V. de Mieroop, P. Roussel, and G. Groeseneken, IEEE Trans Electron Dev., 49, 500 (2002).CrossRefGoogle Scholar
  143. 143.
    M. Alam, R. Smith, B. Weir, and P. Silverman, in IEDM Techn. Digest, p. 151, 2002.Google Scholar
  144. 144.
    J. Suíié and E. Wu, in IEDM Techn. Digest, p. 147, 2002.Google Scholar
  145. 145.
    B. Linder, J. Stathis, R. Wachnik, E. Wu, S. Cohen, A. Ray, and A. Vayshenker, in Proc. VLSI Technology Symposium, p. 214, 2000.Google Scholar

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  • A. Ghetti

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