Abstract
The main objective of this chapter is to analyze the influence of the quantum confinement on the electronic levels of point defects and impurities, from quantum wells to quantum dots. In the first two parts, we present the general trends for hydrogenic and deep defects. In the next sections, we consider particular situations: dangling bonds, self-trapped excitons and oxygen related defects at the Si-SiO2 interface.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2004 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Delerue, C., Lannoo, M. (2004). Defects and Impurities. In: Nanostructures. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-08903-3_6
Download citation
DOI: https://doi.org/10.1007/978-3-662-08903-3_6
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-05847-9
Online ISBN: 978-3-662-08903-3
eBook Packages: Springer Book Archive