Abstract
Silicon crystal growth is one of the key processes that determine the yield and the profitability in semiconductor device manufacturing. The art of growing silicon crystals is today highly developed and the quality, purity and size of today’s crystals have reached an outstanding level. However, the so-called grown-in defects, which are related to the pulling of crystals, can not be perfectly controlled. Such defects can deteriorate devices, and the ongoing increase of integration density requires wafer with even lower defect concentration. Hence the control and reduction of grown-in defects still remains an important challenge for crystal growers. The formation of grown-in defects is predominantly affected by intrinsic point defects, which diffuse, recombine and aggregate in the silicon lattice during growth and cooling of the ingot. We present a detailed defect model for silicon crystals which incorporates all relevant phenomena. Conservation equations for self-interstitials and vacancies are introduced and a finite element method is provided for predicting the concentration of point defects in growing Czochralski silicon crystals.
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Voigt, A., Weichmann, C. (2003). Transport of Point Defects in Growing Si Crystals. In: Emmerich, H., Nestler, B., Schreckenberg, M. (eds) Interface and Transport Dynamics. Lecture Notes in Computational Science and Engineering, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07969-0_22
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DOI: https://doi.org/10.1007/978-3-662-07969-0_22
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-07320-5
Online ISBN: 978-3-662-07969-0
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