Abstract
The with-in wafer non-uniformity (WIWNU) of the material removal rate (MRR) has long been a concern in CMP. For instance, the rapid variation of the material removal rate at the wafer edge, also known as edge effect, requires an exclusion of the wafer edge after CMP. This reduces the yield of the process. In the shallow trench isolation and copper damascene process, the uneven material removal rates across the wafer cause an over-polishing in the regions where the material is removed faster. This causes a degradation of the circuit performance there. The WIWNU will also bring a systematic variation of the circuit performance across the wafer. A better understanding of the mechanisms driving the WIWNU will help to increase the yield and improve the circuit performance.
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© 2004 Springer-Verlag Berlin Heidelberg
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Luo, J., Dornfeld, D.A. (2004). Wafer-Scale Modeling of CMP. In: Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07928-7_8
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DOI: https://doi.org/10.1007/978-3-662-07928-7_8
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-06115-8
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