Abstract
The understanding of the material removal mechanism in CMP should be based on understanding the roles of the cutting tools, namely, the abrasives, and their interactions with other important input values such as the pad, chemical and wafer materials. The effect of abrasive size distribution in chemical-mechanical planarization has long been observed [4.1–4.7] [4.13] [4.14]. For example, experimental results show that there is an inverse proportional relationship between the abrasive size and the material removal rate [4.2–4.3]. Connections between size distribution and the scratching of the wafer surface have also been observed and reported [4.5–4.6]. Beside the experimental research, however, there is a general lack of models which can accurately predict the performance of consumables, and specially, the abrasive particles. This limits the application of the experimental results for the optimization of the CMP process.
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Luo, J., Dornfeld, D.A. (2004). Effects of Abrasive Size Distribution in CMP. In: Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07928-7_4
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DOI: https://doi.org/10.1007/978-3-662-07928-7_4
Publisher Name: Springer, Berlin, Heidelberg
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