Abstract
The two most recently published [1 to 3] phase diagrams for the Si-C system show somewhat deviating results. They were combined by [4], giving the diagram shown in Fig. 1. The only condensed phases that occur in this phase diagram are silicon, silicon carbide (SiC), and graphite [4]. See also [5, 6]. In addition, however, decomposition of a gaseous mixture of SiCl4, CH4, and Ar at 1900 K has been found to give in up to 24% yield an Si-containing phase corresponding to nearly perfect graphite, with a maximum content of 0.14% Si, along with pyrocarbon [7].
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
C. E.Lowell (TM-436 [1959]).
R. T. Dolloff (WADD-TR-60–143 [1960] 1/28; N.S.A. 15 [1961] No. 4304).
/5; Silicon Carbide High Temp. Semicond. Proc. Conf., Boston, Mass., 1959 [1960], pp. 24/30; C.A. 1961 7018 ).
R. P. Elliott (Constitution of Binary Alloys, 1st Suppl., McGraw Hill, New York 1965, pp. 227/9).
A. S. Berezhnoi (Silicon and Its Binary Systems, Consultants Bureau New York 1960, pp. 1/275, 70/3).
W. von Winch (Landolt-Börnstein New Ser. Group 11117 Pt. c [1984] 403/16, 585/92).
C. Suznjevic, Z. Lausevic, S. Marinkovic (Proc. 5th London Intern. Carbon Graphite Conf.,London 1978, Vol. 2, pp. 817/22; C.A. 93 [1980] No. 28603).
F. W. Voltmer, F. A. Padovani (Semicond. Silicon Papers 2nd Intern. Symp. Silicon Mater. Sci. Technol., Chicago 1973, pp. 75/82; C.A. 81 [1974] No. 178017).
H. Nowotny, E. Parthé, R. Kieffer, F. Benesovsky (Monatsh. Chem. 85 [1954] 255/72).
K. L. Weisskopf, J. Lorenz, G. Petzow (BMFT-Referat 130–01-ZC-130A-Za-NT-NTS-1021 [1983]).
J. Smiltens (Silicon Carbide High Temp. Semicond. Proc. Conf., Boston, Mass., 1959 [1960], pp$13/15; C.A. 1961 7014; PB-137464 [1959] 1/38 from C.A. 1960 11673 ).
W. V. Wright, F. T. C. Bartels (Silicon Carbide High Temp. Semicond. Proc. Conf., Boston, Mass., 1959 [1960], pp. 31/7).
I. S. Brokhin, V. F. Funke (Zh. Neorgan. Khim. 3 [1958] 847/53; Russ. J. Inorg. Chem. 3 No. 4 [1958] 9/21). [14] I. S. Brokhin, V. F. Funke (in: S. I. Bashkirov, Hard Metals Production Technology and Research in the U.S.S.R., Pergamon Press, Oxford 1964, pp. 212/25).
W. F. Knippenberg (Philips Res. Rept. 18 [1963] 161/274; C.A. 60 [ 1964 ] 11435 ).
A. R. Kieffer, P. Ettmayer, E. Gugel, A. Schmidt (Mater. Res. Bull. 4 [1969] S 153/S166).
E. Gugel, P. Ettmayer, A. Schmidt (Ber. Deut. Keram. Ges. 45 [1968] 395/402).
T. Nozaki, Y. Yatsurugi, N. Akiyama (J. Electrochem. Soc. 117 [1970] 1566/8).
U. Rosenblatt (Sprechsaal 113 [1980] 866/70; C.A. 95 [1981] No. 11428).
Y. Yatsurugi, N. Akiyama, Y. Endo, T. Nozaki (J. Electrochem. Soc. 120 [1973] 975/9).
T. Nozaki, Y. Makide, Y. Yatsurugi, Y. Endo, N. Akiyama (Bull. Chem. Soc. Japan 45 [1972] 2776/8).
R. C. Newman, J. Wakefield (Met. Soc. Conf. 15 [1961/62] 201/7 according to F. A. Shunk, Constitution of Binary Alloys, 2nd Suppl., McGraw Hill, New York 1969, pp. 156/7).
R. N. Hall (J. Appl. Phys. 29 [1958] 914/7).
F. A. Halden (Silicon Carbide High Temp. Semicond. Proc. Conf., Boston, Mass., 1959 [1960], pp. 115/23; C.A. 1961 6976 ).
A. R. Bean, R. C. Newman (J. Phys. Chem. 32 [1971] 1211/9).
Y. Endo, Y. Yatsurugi, N. Akiyama (Anal. Chem. 44 [1972] 2258/62).
V. N. Eremenko, G. G. Gnesin, M. M. Chu rakov (Poroshkovaya Met. 12 No. 6 [1972] 55/9; Soviet Powder Met. Metal Ceram. 12 [1972] 471/4).
W. P. Minnear (J. Electrochem. Soc. 126 [1979] 634/6, 2273/4).
G. G. Gnesin, A. V. Kurdyumov, G. S. Oleinik (Poroshkovaya Met. 11 No. 5 [1972] 78/81; Soviet Powder Met. Metal Ceram. 11 [1972] 402/4).
G. G. Gnesin, A. V. Kurdyumov (Karbid Kremniya Dokl. Vses. Konf., Kiev 1964 [1966], pp. 83/90; Silicon Carbide Rept. All-Union Conf., Kiev 1964 [1970], pp. 61/7).
A. N. Shurshakov, V. S. Dergunova, G. A. Meerson, B. A. Sizov (in: G. V. Samsonov, Refractory Carbides, Consultants Bureau, New York 1974, pp. 125/31).
J. A. Baker, T. N. Tucker, N. E. Moyer, R. C. Buschert (J. Appl. Phys. 39 [1968] 4365/8).
J. A. Lely (Ber. Deut. Keram. Ges. 32 [1955] 229/31).
P. T. B. Shaffer (Mater. Res. Bull. 4 [1969] S 97/S 106).
M. Nagatomo, H. Ishiwara, S. Furukawa (Japan. J. Appl. Phys. 18 [1979] 765/70).
V. A. Il’in, M. M. Piryutko, N. D. Sorokin, Yu. M. Tairov, V. G. Tsvetkov (Izv. Akad. Nauk SSSR Neorgan. Materialy 16 [1980] 1014/7; Inorg. Materials [USSR] 16 [1980] 699/702).
N. D. Sorokin, Yu. M. Tairov, V. F. Tsvetkov (Poverkhnost 1983 No. 5, pp. 97/105; C.A. 99 [1983] No. 80335).
F. Raikhel, N. D. Sorokin, Yu. M. Tairov, V. F. Tsvetkov (Pis’ma Zh. Tekhn. Fiz. 8 No. 2 [1982] 101/4; Soviet Tech. Phys. Letters 8 [1982] 43/4).
J. Drowart, G. de Maria (Silicon Carbide High Temp. Semicond. Proc. Conf., Boston, Mass., 1959 [1960], pp. 16/23; C.A. 1961 7015 ).
B. F. Yudin, V. G. Borisov (Ogneupory 32 [1967] 44/50; Refractories [USSR] 7/8 [1967] 499/504).
Yu. A. Vodakov, E. N. Mokhov, M. G. Ramin, A. D. Roenkov (Krist. Tech. 14 [1979] 729/40).
A. L. Pustovoitenko, M. V. Lur’e (Izv. Vysshikh Uchebn. Zavedenii Khim. Khim. Tekhnol. 17 [1974] 304/5 from C.A. 81 [1974] No. 17306).
Yu. M. Tairov, V. F. Tsvetkov (Izv. Akad. Nauk SSSR Neorgan. Materialy 13 [1977] 1606/10; Inorg. Materials [USSR] 13 [1977] 1299/303).
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1985 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Haase, V. et al. (1985). The Si-C Phase Diagram. In: Katscher, H., Sangster, R., Schröder, F. (eds) Si Silicon. Gmelin Handbook of Inorganic Chemistry / Gmelin Handbuch der Anorganischen Chemie, vol S-i / B / 1-5 / 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-06994-3_1
Download citation
DOI: https://doi.org/10.1007/978-3-662-06994-3_1
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-662-06996-7
Online ISBN: 978-3-662-06994-3
eBook Packages: Springer Book Archive