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Charge Transport and Scattering Processes in the Many-Valley Model

  • Karlheinz Seeger
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Part of the Advanced Texts in Physics book series (ADTP)

Abstract

In Sect. 2.4, Figs. 2.26, 27, we saw that the conduction bands of silicon and germanium have constant energy surfaces near the band edge which are either 8 half-ellipsoids or 6 ellipsoids of revolution; these correspond to 4 and 6 energy valleys, respectively. In these and many other semiconductors the many-valley model of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclotron resonance (Sect. 11.11) provides a direct experimental determination of the effective masses in each valley for any crystallographic direction.

Keywords

Charge Transport Threshold Field Central Valley Gunn Diode Ionize Impurity Scattering 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.ViennaAustria
  2. 2.Institut für MaterialphysikUniversitätViennaAustria

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