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Semiconductor Physics pp 47–117Cite as

Charge and Energy Transport in a Nondegenerate Electron Gas

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Abstract

In the preceding chapters, we have seen that a mobile charge carrier in a semiconductor has an effective mass m which is different from the free electron mass m 0. The effective mass takes care of the fact that the carrier is subject to the crystal field. In discussing the velocity distribution of the gas of carriers, we found that the Fermi—Dirac distribution holds in general and that the Maxwell—Boltzmann distribution f(v) ∝ exp(−mv 2/2 k B T) is an approximation of the former which is valid for nondegenerate semiconductors. Here the carrier density is small compared with the effective density of states N c, in the conduction band and N v, in the valence band (3.1.12). For these distributions, no externally applied electric fields were assumed to be present. Instead, the calculations were based on the assumption of thermal equilibrium.

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Authors and Affiliations

  1. Am Modenapark 13/5, 1030, Vienna, Austria

    Professor Karlheinz Seeger

  2. Institut für Materialphysik, Universität, 1090, Vienna, Austria

    Professor Karlheinz Seeger

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Seeger, K. (2002). Charge and Energy Transport in a Nondegenerate Electron Gas. In: Semiconductor Physics. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-05025-5_4

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  • DOI: https://doi.org/10.1007/978-3-662-05025-5_4

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