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GaAs Based Field Effect Transistors for Radiation-Hard Applications

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Radiation Effects in Advanced Semiconductor Materials and Devices

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 57))

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Abstract

The high electron mobility of GaAs and related III–V compounds renders these materials very suitable for high-speed digital and microwave/millimeter wave applications. The superior operation frequency combined with low high-frequency noise and power dissipation has been exploited for the development of satellite and other telecommunications systems. In this respect, the extreme radiation hardness quoted for these materials is an invaluable plus point: total dose radiation tolerance levels up to 1 Grad(GaAs) have been observed, which is at least two orders of magnitude better than for hardened Si-based technologies. Nowadays, InP is more and more replacing GaAs substrates. However, the use of the semi-insulating (SI) substrates brings about some specific radiation effects, which jeopardize the correct functioning of devices and circuits. Therefore, in Sect. 7.2, some relevant material properties, related to ternary alloys used in a FET and the structure and operation of the Metal-Semiconductor Field-Effect Transistor (MESFET) and the High Electron Mobility Transistor (HEMT), also called Modulation Doped FET (MODFET) will be described. The radiation response and hardening of MESFETs will be presented in Sect. 7.3, followed next by the behavior of HEMTs (Sect. 7.4). Some general conclusions are drawn in Sect. 7.5.

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  1. IMEC Leuven/Belgium, Kapeldreef 75, 3001, Leuven, Belgium

    Prof. Cor Claeys & Dr. Eddy Simoen

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  1. Prof. Cor Claeys
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© 2002 Springer-Verlag Berlin Heidelberg

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Claeys, C., Simoen, E. (2002). GaAs Based Field Effect Transistors for Radiation-Hard Applications. In: Radiation Effects in Advanced Semiconductor Materials and Devices. Springer Series in Materials Science, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04974-7_7

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  • DOI: https://doi.org/10.1007/978-3-662-04974-7_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-07778-4

  • Online ISBN: 978-3-662-04974-7

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