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Energy Transport Model for Silicon Semiconductors Derived from the Non Parabolic Band Hydrodynamical Model Based on the Maximum Entropy Principle

  • V. Romano
Part of the Mathematics in Industry book series (MATHINDUSTRY, volume 1)

Abstract

An energy-transport model for the charge carrier transport in a silicon semiconductor is presented. The model has been derived in [1] starting from the hydrodynamical one obtained by employing the maximum entropy principle upon the assumption that the energy bands are described by the Kane dispersion relation. An application to a benchmark problem is shown.

Keywords

Moment Equation Diffusion Matrix Maximum Entropy Principle Charge Carrier Transport Silicon Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Romano, V. (2000) Nonparabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices. To appear in M 2 AS.Google Scholar
  2. 2.
    Anile, A.M., and Romano, V. (1999) Non parabolic band transport in semiconductors: closure of the moment equations. Cont. Mech. Thermodyn, 11, 307–325.MathSciNetzbMATHCrossRefGoogle Scholar
  3. 3.
    Romano, V. (2000) Non parabolic band transport in semiconductors: closure of the production terms in the moment equations. Cont. Mech. Thermodyn, 12, 31–51.MathSciNetzbMATHCrossRefGoogle Scholar
  4. 4.
    Anile, A.M., Muscato, O., and Romano, V. (2000) Moment equations with maximum entropy closure for carrier transport in semiconductors devices: validation in bulk silicon. VLSI Design, 10, 335–354.CrossRefGoogle Scholar
  5. 5.
    Liotta, F., Romano, V., and Russo, G. (1999) Central schemes for systems of balance laws. International Series of Numerical Mathematics, 130, 651–660.MathSciNetGoogle Scholar
  6. 6.
    Liotta, F., Romano, V., and Russo, G. (2001) Central schemes for balance laws of relaxation type. SIAM J. Num. Analysis, 38, 1337–1356.MathSciNetCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • V. Romano
    • 1
  1. 1.Dipartimento Interuniversitario di MatematicaPolitecnico di BariBariItaly

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