Energy Transport Model for Silicon Semiconductors Derived from the Non Parabolic Band Hydrodynamical Model Based on the Maximum Entropy Principle
An energy-transport model for the charge carrier transport in a silicon semiconductor is presented. The model has been derived in  starting from the hydrodynamical one obtained by employing the maximum entropy principle upon the assumption that the energy bands are described by the Kane dispersion relation. An application to a benchmark problem is shown.
KeywordsMoment Equation Diffusion Matrix Maximum Entropy Principle Charge Carrier Transport Silicon Semiconductor
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- 1.Romano, V. (2000) Nonparabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices. To appear in M 2 AS.Google Scholar