Advanced Transport Modelling in a Microelectronics Company: Status and Perspectives

  • C. Bergonzoni
  • A. Benvenuti
  • A. Marmiroli
Part of the Mathematics in Industry book series (MATHINDUSTRY, volume 1)


The currently used TCAD transport modelling tools for semiconductor device simulation are reviewed, with particular emphasis on the performance and reliability issues relating to CMOS and non volatile memory devices. The different methods for approximating the solution of the Boltzmann transport equation (BTE) are compared, and their suitability for the high energy transport regime simulation is analyzed. Examples of the application of device simulations to the study the hot carrier reliability of CMOS transistors and charge carriers injection in non-volatile memory cell programming cycles are shown. The importance of proper definition and adaptation of the discretization grid is pointed out, and the implications of quantum effects in state-of-the-art deep submicron devices are discussed.


Gate Insulator Boltzmann Transport Equation Internal Electric Field Floating Gate CMOS Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Ning, T.H. (1978) Hot electron emission from silicon into silicon dioxide. Solid-State Electron, 21, 273–282.CrossRefGoogle Scholar
  2. 2.
    Schmitt, D. and Dorda G. (1981) Interface states in MOSFETs due to hot-electron injection determined by the charge pumping technique. Electronics Lett, 17, 761–762.CrossRefGoogle Scholar
  3. 3.
    Takeda, E. and Suzuki, N. (1983) An empirical model for device degradation due to hot carrier injection. IEEE El. Del). Lett., EDL-4, 111–113.Google Scholar
  4. 4.
    Doyle, B.S., Bourcerie, M., Bergonzoni, C., Benecchi, R., Bravis, A., Mis-try, K.R. and Boudou, A. (1990) The generation and chareacterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors. IEEE Trans. El. Dey., vol. 37, n. 8, 1869–1876.CrossRefGoogle Scholar
  5. 5.
    Reggiani, L ed. (1985) Hot carrier transport in semiconductors. Springer-Verlag.Google Scholar
  6. 6.
    Laux s.E. and Fischetti M.V. (1999) Issues in modeling small devices. IEDM 99 Tech. Digest, Washington.Google Scholar
  7. 7.
    Cappelletti, P., Golla, C. Olivo P. and Zanoni E. eds. (1999) FLASH memories. Kluwer Accademic publishers.Google Scholar
  8. 8.
    Banoo, k., Lundstrom, M. and Kent Smith, R. (2000) Direct solution of the Boltzmann transport equation in nanoscale Si devices. in Proc. of SISDEP 2000 50–53, Seattle.Google Scholar
  9. 9.
    Spinelli, A.S., Benvenuti, A. and Pacelli, A. Self-consistent 2-D model for quantum effects in n-MOS transistors. IEEE Trans. El. Dev., Vol. 45 no. 6, 1342–1349.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • C. Bergonzoni
    • 1
  • A. Benvenuti
    • 1
  • A. Marmiroli
    • 1

Personalised recommendations