An Extended Fluid-Dynamical Model Describing Electron Transport in Semiconductors

  • G. Mascali
  • M. Trovato
Conference paper
Part of the Mathematics in Industry book series (MATHINDUSTRY, volume 1)


In this paper we consider an extended hydrodynamical-like model describing the transport of electric charges in semiconductors. We start from the Boltzmann transport equation (BTE) and use the method of moments and the Maximum Entropy Principle (MEP) in the framework of Extended Thermodynamics. We apply this model to silicon semiconductors, for which we also test the accuracy of the closure relations by means of a comparison with Monte Carlo results.


Monte Carlo Monte Carlo Simulation Momentum Flux Fundamental Variable Deviatoric Part 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    I. Müller, T. Ruggeri, Rational Extended Thermodynamics, second edition, Springer, Berlin, 1998.zbMATHCrossRefGoogle Scholar
  2. 2.
    A. Markowich, C. A. Ringhofer and C. Schmeiser, Semiconductor equations, Springer-Verlag, Wien (1990).Google Scholar
  3. 3.
    A. M. Anile, M. Trovato, Non linear closures for hydrodynamical semiconductor transport models, Physics letters A, 230, 1997, pp. 387–395.CrossRefGoogle Scholar
  4. 4.
    G. Mascali, M. Trovato, A non-linear determination of the distribution function of degenerate gases with an application to semiconductors, in preparation.Google Scholar
  5. 5.
    C. D. Levermore, Moment Closure Hierarchies for Kinetic Theories, J. Stat. Phys., 83 1021–1065(1996).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • G. Mascali
    • 1
  • M. Trovato
    • 2
  1. 1.Università di CataniaCataniaItalia
  2. 2.Università di SassariSassariItalia

Personalised recommendations