An Extended Fluid-Dynamical Model Describing Electron Transport in Semiconductors
In this paper we consider an extended hydrodynamical-like model describing the transport of electric charges in semiconductors. We start from the Boltzmann transport equation (BTE) and use the method of moments and the Maximum Entropy Principle (MEP) in the framework of Extended Thermodynamics. We apply this model to silicon semiconductors, for which we also test the accuracy of the closure relations by means of a comparison with Monte Carlo results.
KeywordsMonte Carlo Monte Carlo Simulation Momentum Flux Fundamental Variable Deviatoric Part
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