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Basic Semiconductor Physics pp 125–182Cite as

Optical Properties 2

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Abstract

Two phenomena are known as the electric field induced change in reflectivity. One is linearly proportional to the electric field and is known as the Pockels effect and the other is quadratically proportional to the electric field and is known as the Kerr effect. These two phenomena are called the electro-optic effect and are observed in the transparent region and thus well below the fundamental absorption edge. For example, the Pockels effect is expressed by

$$ \mathop {(\mathop \delta \nolimits_k - 1)}\nolimits^{ij} = rijk\mathop E\nolimits_k ( \equiv \delta \mathop \beta \nolimits_{ij} ) $$

where E is the electric field applied to a crystal, (δk -1)ij is the ij component of the change in the inverse dielectric constant and r ijk is called the Pockels electro-optic constant. In this Section we will not go into detail on this kind of phenomenological treatment but we will consider the magnitude of the change in the dielectric constant near the fundamental absorption edge induced by the applied electric field in a semiconductor.

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Authors and Affiliations

  1. Graduated School of Engineering, Department of Electronic Engineering, Osaka University, 565-0871, Suita City, Osaka, Japan

    Professor Chihiro Hamaguchi

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  1. Professor Chihiro Hamaguchi
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© 2001 Springer-Verlag Berlin Heidelberg

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Hamaguchi, C. (2001). Optical Properties 2. In: Basic Semiconductor Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04656-2_5

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  • DOI: https://doi.org/10.1007/978-3-662-04656-2_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-07492-9

  • Online ISBN: 978-3-662-04656-2

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