Abstract
Bulk-terminated {111}–1 × 1 surfaces of zincblende-structure compounds would be either cation- or anion-terminated. Such [111]- and [111]-oriented surfaces, respectively, are found to be 2 × 2-reconstructed. The GaAs(111)–2×2 structure results from the existence of Ga vacancies which expose three As atoms of the second layer. The atomic arrangement is thus similar to the Ga-As zigzag chains on cleaved (110)–1 × 1 surfaces. The GaAs(111)–2 × 2 reconstruction, on the other hand, consists of As-trimers on a complete As layer beneath. The presence of As vacancies is excluded since their formation is endothermic on such surfaces.
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© 2001 Springer-Verlag Berlin Heidelberg
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Mönch, W. (2001). {111} Surfaces of Compounds with Zincblende Structure. In: Semiconductor Surfaces and Interfaces. Springer Series in Surface Sciences, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04459-9_13
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DOI: https://doi.org/10.1007/978-3-662-04459-9_13
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-08748-6
Online ISBN: 978-3-662-04459-9
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