Abstract
The best nanoscale ferroelectric thin-film arrays to be produced thus far are by Alexe [516]. As shown in Fig. 17.1, these e-beam arrays of SBT are 100 nm on a side and switch very well. They are about 100 times smaller than those reported elsewhere [517]. These arrays were fabricated with minimum lateral sizes less than 100 nm by using Electron Beam Direct Writing (EBDW); such maskless direct writing eliminates the need for submicron etching. It is useful for metallic and oxide nanostructures. Chemical reactions are induced locally in a metal—organic thin film by irradiation with an e-beam. The resulting pattern is developed by dissolving the unexposed area in a specific solvent and fixed by thermal annealing.
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References
Alexe M., ISIF, Colorado Springs (March 1999), Integ. Ferroelec. (in press)
Okamura S., Mori K., Tsukamoto T., and Shiosaki T., Integ. Ferroelec. 18, 311 (1997)
Scott J. F. et al., Integ. Ferroelec. 21, 1 (1998)
Alexe M. et al., Appl. Phys. Lett. 73, 1592 (1998); Switzer J. A., Shumsky M. G., and Bohannan E. W., Science 284, 293 (1999)
Yu B., Zhu C., and Gan F., J. Appl. Phys. 82, 4532 (1997)
Taylor G. I., Proc. Roy. Soc. (London) A280, 383 (1964); Turnbull D., J. Appl. Phys. 23, 1022 (1950)
Wakayama Y. and Tanaka S.-I., Proc. Nano’98, Stockholm (June 16, 1998) p.49; Nanostructured Materials 12 13 (1999)
Moore J. T. et al., Appl. Phys. Lett. 72, 1840 (1998); 72, 1254 (1998); Burmeister F. et al., Adv. Mater. 10, 495 (1998)
Watanabe K. et al., Japanese patent application # H08–261500
Zafar S. et al., J. Appl. Phys. 82, 4469 (1997)
Watanabe K., Scott J. F., Hartmann A. J.; Appl. Phys. (in press, 1999); Hartner W. et al., Integ. Ferroelec. 22, 23 (1998)
Watanabe K., Hartmann A. J., and Scott J. F., Appl. Phys. (in press 1999)
Isobe C. et al., Integ. Ferroelec. 14, 95 (1997)
Alexe M., Goesele U. et al., submitted to Science (1999)
Amanuma K. and Kunio T., Jpn. J. Appl. Phys. 35, 5229 (1996)
Scott J. F., Thin Film Ferroelectric Materials and Devices, ed. R. Ramesh (Kluwer Academic, Dordrecht, 1997) p.115
Sushkov O., private communication
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Scott, J.F. (2000). Nanophase Devices. In: Ferroelectric Memories. Springer Series in Advanced Microelectronics, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04307-3_17
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DOI: https://doi.org/10.1007/978-3-662-04307-3_17
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