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Characterization of Bulk Semiconductors Using Raman Spectroscopy

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Book cover Raman Scattering in Materials Science

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 42))

Abstract

This chapter provides a brief overview of Raman scattering in semiconductors. The large amount of experimental information on these materials is reviewed from the perspective of the latest theoretical advances, and detailed expressions are given that should allow the reader to compute Raman spectra and to compare theoretical cross sections with experimental photon counts. Applications of Raman spectroscopy to measurements of crystal orientation, temperature, stress, impurities and alloying are succinctly reviewed, with emphasis on the principles underlying these applications and on the scope and limitations of the information that can be obtained with Raman spectroscopy.

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  1. J. Menéndez
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Editors and Affiliations

  1. Physics Department MD3028/SRL, Ford Motor Company, 48121-2053, Dearborn, MI, USA

    Willes H. Weber (Principal Research Scientist) (Principal Research Scientist)

  2. Department of Physics, 500 East University, University of Michigan, 48109-1120, Ann Arbor, MI, USA

    Roberto Merlin

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Menéndez, J. (2000). Characterization of Bulk Semiconductors Using Raman Spectroscopy. In: Weber, W.H., Merlin, R. (eds) Raman Scattering in Materials Science. Springer Series in Materials Science, vol 42. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04221-2_3

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  • DOI: https://doi.org/10.1007/978-3-662-04221-2_3

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