Abstract
Etching technology is used either to remove complete surface layers, or to transfer lithographically generated mask patterns into the underlying layer. The quality of pattern transfer depends on the type of etch process used. Typical etch profiles are shown in Fig. 5.1. In an isotropic etch process the same degree of attack occurs in all directions, so that undercutting of the layer occurs beneath the mask (Fig. 5.1 a). An anisotropic etch process is directional in character. Thus if etching only occurs normal to the wafer surface, the mask pattern is accurately transferred to the underlying layer without a change in dimensions (Fig. 5.1 b). The etch profile shown in Fig. 5.1 c is the most likely outcome of an etch process. A measure of the degree of anisotropy is the anisotropy factor f, defined as:
where the each rate is given by
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Widmann, D., Mader, H., Friedrich, H., Heywang, W., Müller, R. (2000). Etching technology. In: Technology of Integrated Circuits. Springer Series in ADVANCED MICROELECTRONICS, vol 2. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04160-4_5
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