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Multilayer Color Detectors

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Technology and Applications of Amorphous Silicon

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 37))

Abstract

Amorphous silicon technology can be favorably employed to achieve a new generation of integrated color sensitive detectors. The high absorption coefficient, together with the ease of fabricating multi-layered structures, offer many opportunities for new devices. The structures take further advantage of two particular properties of a-Si:H, that it can be deposited on large area by glow discharge and at relatively low temperature. This chapter describes the amorphous silicon color detectors, along with their device structure and addressing architecture. A brief introduction to related photo-detectors for infrared and ultraviolet detection is also presented.

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Authors and Affiliations

  1. Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18, I-00184, Roma, Italy

    Fabrizio Palma

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  1. Fabrizio Palma
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  1. Xerox PARC, 3333 Coyote Hill Road, 94304, Palo Alto, CA, USA

    Robert A. Street

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© 2000 Springer-Verlag Berlin Heidelberg

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Palma, F. (2000). Multilayer Color Detectors. In: Street, R.A. (eds) Technology and Applications of Amorphous Silicon. Springer Series in Materials Science, vol 37. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04141-3_7

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  • DOI: https://doi.org/10.1007/978-3-662-04141-3_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-08499-7

  • Online ISBN: 978-3-662-04141-3

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