Coulomb Effects

  • Weng W. Chow
  • Stephan W. Koch


In Chap. 2, we describe a simple model for semiconductor gain from a free (i.e., noninteracting) electron-hole plasma. While this model provides some useful insight to the elementary physics of a semiconductor gain medium, its inadequacies show up in analyses of high-quality samples and advanced laser structures, where one clearly sees signatures of the more subtle Coulomb interaction effects among carriers. This chapter, as well as the next one, discusses approaches towards a more realistic description of the gain medium, where one includes the Coulomb interaction between charge carriers. The Coulomb potential is attractive between electron and holes (interband attraction) and repulsive for carriers in the same band (intraband repulsion) Since Coulomb interaction processes always involve more than one carrier, the resulting effects are often called many-body effects, and quantum mechanical many-body techniques have to be used to analyze these phenomena.


Carrier Density Peak Gain Screen Coulomb Potential Coulomb Effect Pade Approximation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


For more details on the semiconductor Bloch equations and for further references see

  1. Binder, R. and S. W. Koch, Progress in Quantum Electronics 19, 307 (1995).ADSCrossRefGoogle Scholar
  2. Koch, S. W., N. Peyghambarian, and M. Lindberg (1988), J. Phys. C21, 5229.ADSGoogle Scholar
  3. Haug, H. and S. W. Koch (1989), Phys. Rev. A39, 1887.ADSGoogle Scholar
  4. Haug, H. (1988), Ed., Optical Nonlinearities and Instabilities in Semiconductors, Academic, New York (1988)Google Scholar
  5. Stahl, A. and I. Balslev (1987), Electrodynamics of the Semiconductor Band Edge, Springer Tracts in Modern Physics 110, Springer-Verlag, Berlin.CrossRefGoogle Scholar
  6. Haug, H. and S. W. Koch (1994), Quantum Theory of the Optical and Electronic Properties of Semiconductors, 3rd ed., World Scientific, Singapore.zbMATHGoogle Scholar
  7. Lindberg, M. and S.W. Koch (1988), Phys. Rev. B38, 3342.ADSGoogle Scholar

Discussions of the two-level Bloch equations can be found in

  1. Allen, L. and J. H. Eberly (1975), Optical Resonances and Two-Level Atoms, John Wiley, New York; reprinted (1987) with corrections by Dover, New York.Google Scholar
  2. Meystre, P. and M. Sargent III (1991), Elements of Quantum Optics, 2nd Ed., Springer-Verlag, Heidelberg.Google Scholar
  3. Sargent III, M., M. O. Scully, and W. E. Lamb (1977), Laser Physics, Addison Wesley, Reading, MA.Google Scholar

The classical theory of plasma screening is discussed in

  1. Ashcroft, N. W. and N. D. Mermin (1976), Solid State Theory, Saunders College, Philadelphia.Google Scholar
  2. Harrison, W. A. (1980), Solid State Theory, Dover Publ. New York.Google Scholar
  3. Haug, H. and S. W. Koch (1994), Op. Cit.Google Scholar

General many-body theory and sum rules are discussed in

  1. Lundquist, B. I. (1967), Phys. Konden. Mat. 6, 193 and 206.Google Scholar
  2. Mahan, G. D. (1981), Many Particle Physics, Plenum Press, New York.Google Scholar

For the modifications of the plasmon-pole approximation in an electron-hole plasma see

  1. Haug, H. and S. Schmitt-Rink (1984), Op. Cit.Google Scholar
  2. Zimmermann, R. (1988), Many-Particle Theory of Highly Excited Semiconductors, Teubner, Berlin.Google Scholar

For the Padé approximation, see

  1. Gaves-Morris, P. R. (1973), Ed., Padé Approximants and Their Application, Academic Press, N.Y.Google Scholar
  2. Haug, H. and S. W. Koch (1989), Phys. Rev. A39, 1887.ADSGoogle Scholar

We have used the integral tables in

  1. Gradshteyn, I. S. and I. M. Rhyzhik (1980), Tables of Integals, Series and Products, Academic Press, New York.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1999

Authors and Affiliations

  • Weng W. Chow
    • 1
  • Stephan W. Koch
    • 2
  1. 1.Sandia National LaboratoriesAlbuquerqueUSA
  2. 2.Fachbereich Physik und Wissenschaftliches Zentrum für MaterialwissenschaftenPhilipps-Universität MarburgMarburgGermany

Personalised recommendations